Blank Cover Image

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

著者名:
S. Yang
Q.W. Song
X.Y. Tang
Y.M. Zhang
H. Yuan
Q.J. Sun
さらに 1 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
431
終了ページ:
434
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Improved Planar MOS Barrier Schottky (PMBS) Rectifier with High-k Dielectrics

Q.W. Song, Y.M. Zhang, X.Y. Tang, Y.H. Wang, H. Yuan

Trans Tech Publications
7 国際会議録 Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC

Dahlquist,F., Zetterling,C.-M., Ostling,M., Rottner,K.

Trans Tech Publications
2 国際会議録 Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer

L. Yuan, Y.M. Zhang, Q.W. Song, X.Y. Tang

Trans Tech Publications
8 国際会議録 Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures

K.H. Kim, Y.H. Kang, J.H. Lee, E.S. Jung, I.H. Kang

Trans Tech Publications
3 国際会議録 High Performance of 5.7kV 4H-SiC JBSs with Optimized Non-Uniform Field Limiting Rings Termination

H. Yuan, Q.W. Song, X.Y. Tang, Y.M. Zhang, H. Guo

Trans Tech Publications
9 国際会議録 Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three- Zone Junction Termination Extension

H. Kitai, Y. Hozumi, H. Shiomi, M. Furumai, K. Omote, K. Fukuda

Trans Tech Publications
4 国際会議録 The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)

H. Yuan, X.Y. Tang, Y.M. Zhang, H.L. Lv

Trans Tech Publications
10 国際会議録 4H-SiC Trench Schottky Diodes for Next Generation Products

Q.C.J. Zhang, J. Duc, V. Mieczkowski, B. Hull, S. Allen

Trans Tech Publications
5 国際会議録 Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, S.I. Nishizawa, H. Ohashi

Trans Tech Publications
11 国際会議録 Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes

Tumakha, S.P., Porter, L.M., Ewing, D.J., Wahab, Q., Ma, X.Y., Sudarshan, T.S., Brillson, L.J.

Trans Tech Publications
6 国際会議録 Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

B.A. Hull, J.J. Sumakeris, M.J. O'Loughlin, Q.J. Zhang, J. Richmond

Trans Tech Publications
12 国際会議録 Simulations of 10 kV Trench Gate IGBTs on 4H-SiC

Zhang, Q.C., Ryu, S.H., Jonas, C., Agarwal, A.K., Palmour, J.W.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12