Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs

Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

407

終了ページ:

410

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

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2 国際会議録 4H-SiC VJFETs with Self-Aligned Contacts K. Zekentes, A. Stavrinidis, G. Konstantinidis, M. Kayambaki, K. Vamvoukakis Trans Tech Publications	8 国際会議録 Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs Kiritani, N., Hoshi, M., Tanimoto, S., Adachi, K., Nishizawa, S.-i., Yatsuo, T., Okushi, H., Arai, K. Trans Tech Publications
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