Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion

Improved 4H-SiC N-MOSFET Interface Passivation by Combining N₂O Oxidation with Boron Diffusion

著者名:

M. Cabello

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

352

終了ページ:

355

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

類似資料:

1 国際会議録 Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes V. Soler, M. Cabello, M. Berthou, J. Montserrat, J. Rebollo, P. Godignon, E. Bianda, A. Mihaila Trans Tech Publications	7 国際会議録 Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion Perez-Tomas, A., Vellvehi, M., Mestres, N., Millan, J., Vennegues, P., Stoemenos, J. Trans Tech Publications
2 国際会議録 4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric Perez-Tomas, A., Godignon, P., Mestres, N., Montserrat, J., Millan, J. Trans Tech Publications	8 国際会議録 PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces Perez-Tomas, A., Godignon, P., Camassel, J., Mestres, N., Souliere, V. Trans Tech Publications
3 国際会議録 4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric Perez-Tomas, A., Godignon, P., Mestres, N., Tournier, D., Montserrat, J., Millan, J. Materials Research Society	9 国際会議録 Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers Jorda, X., Tournier, D., Rebollo, J., Millan, J., Godignon, P. Trans Tech Publications
4 国際会議録 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O Perez-Tomas, A., Tournier, D., Godignon, P., Mestres, N., Millan, J. Trans Tech Publications	10 国際会議録 New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process P. Brosselard, D. Tournier, M. Vellvehi, J. Montserrat, P. Godignon, J. Millan Trans Tech Publications
5 国際会議録 SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps A. Perez-Tomas, M.R. Jennings, P.A. Mawby, J.A. Covington, P. Godignon, J. Millan, N. Mestres Trans Tech Publications	11 国際会議録 Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC M. Florentin, J. Montserrat, P. Brosselard, A. Henry, P. Godignon Trans Tech Publications
6 国際会議録 Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties Godignon, P., Jorda, X., Vellvehi, M., Berberich, S., Montserrat, J., Ottaviani, L. Trans Tech Publications	12 国際会議録 Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C H. Rong, Y.K. Sharma, P.A. Mawby Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12