Combined N2O and Phosphorus Passivations for the 4H-SiC/SiO2 Interface with Oxide Grown at 1400°C

Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

344

終了ページ:

347

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

類似資料:

1 国際会議録 The Effects of Phosphorus at the SiO₂/4H-SiC Interface Y.K. Sharma, A.C. Ahyi, T. Issacs-Smith, X. Shen, S.T. Pantelides Trans Tech Publications	7 国際会議録 Ellipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces Guy, O.J., Chen, L., Pope, G., Teng, K.S., Maffeis, T., Wilks, S.P., Mawby, P.A., Jenkins, T., Brieva, A., Hayton, D.J. Trans Tech Publications
2 国際会議録 Stable Phosphorus Passivated SiO₂/4H-SiC Interface Using Thin Oxides Y.K. Sharma, A.C. Ahyi, T. Issacs-Smith, M.R. Jennings, S.M. Thomas Trans Tech Publications	8 国際会議録 Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation S.A.O. Russell, M.R. Jennings, T.X. Dai, F. Li, D.P. Hamilton, C.A. Fisher, Y.K. Sharma, P.A. Mawby, A. Pérez-Tomás Trans Tech Publications
3 国際会議録 Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS F. Li, O. Vavasour, M. Walker, D.M. Martin, Y.K. Sharma, S.A.O. Russell, M.R. Jennings, A. Pérez-Tomás, P.A. Mawby Trans Tech Publications	9 国際会議録 An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces Y. Bonyadi, P.M. Gammon, Y.K. Sharma, G. Baker, P.A. Mawby Trans Tech Publications
4 国際会議録 4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis H. Rong, Y.K. Sharma, F. Li, M.R. Jennings, P.A. Mawby Trans Tech Publications	10 国際会議録 Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface J.H. Moon, K.Y. Cheong, H.K. Song, J.H. Yim, M.S. Oh Trans Tech Publications
5 国際会議録 The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors S.M. Thomas, M.R. Jennings, Y.K. Sharma, C.A. Fisher, P.A. Mawby Trans Tech Publications	11 国際会議録 Improved 4H-SiC N-MOSFET Interface Passivation by Combining N₂O Oxidation with Boron Diffusion M. Cabello, V. Soler, N. Mestres, J. Montserrat, J. Rebollo, J. Millán, P. Godignon Trans Tech Publications
6 国際会議録 Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors S.M. Thomas, M.R. Jennings, Y.K. Sharma, C.A. Fisher, P.A. Mawby Trans Tech Publications	12 国際会議録 Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation T. Sledziewski, A. Mikhaylov, S. Reshanov, A. Schöner, H.B. Weber Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12