Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments
類似資料:
1
国際会議録
Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
9
国際会議録
Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |