On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC

On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

254

終了ページ:

257

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

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1 国際会議録 Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices K. Vassilevski, S.K. Roy, N. Wood, A.B. Horsfall, N.G. Wright Trans Tech Publications	7 国際会議録 Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics B.J.D. Furnival, S.K. Roy, N.G. Wright, A.B. Horsfall Trans Tech Publications
2 国際会議録 Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing B.J.D. Furnival, K. Vasilevskiy, N.G. Wright, A.B. Horsfall Trans Tech Publications	8 国際会議録 Silicon Nitride Encapsulation to Preserve Ohmic Contacts Characteristics in High Temperature, Oxygen Rich Environments S.K. Roy, K. Vassilevski, N.G. Wright, A.B. Horsfall Trans Tech Publications
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