New Evidence for the Second Conduction Band in 4H SiC

New Evidence for the Second Conduction Band in 4H SiC

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

250

終了ページ:

253

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

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1 国際会議録 Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence W.M. Klahold, R.P. Devaty, W.J. Choyke, K. Kawahara, T. Kimoto Trans Tech Publications	7 国際会議録 SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2) Starke, U., Lee, W.Y., Coletti, C., Saddow, S.E., Devaty, R.P., Choyke, W.J. Trans Tech Publications
2 国際会議録 Triangular Pore Formation in Highly Doped n-Type 4H SiC Shishkin, Y., Choyke, W.J., Devaty, R.P. Trans Tech Publications	8 国際会議録 Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n-and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 … F. Yan, R.P. Devaty, W.J. Choyke, K. Danno, G. Alfieri Trans Tech Publications
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4 国際会議録 Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC Sridhara, S. G., Bai, S., Shigiltchoff, O., Devaty, R. P., Choyke, W. J. Trans Tech Publications	10 国際会議録 Electrochemical Polishing of p-Type 4H SiC Y. Ke, F. Yan, R.P. Devaty, W.J. Choyke Trans Tech Publications
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