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Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization

著者名:
R.T. Leonard
M.J. Paisley
S. Bubel
J.J. Sumakeris
A.R. Powell
Y. Khlebnikov
J.C. Seaman
J. Ambati
A.A. Burk
M.J. O'Loughlin
E. Balkas
さらに 6 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
226
終了ページ:
232
総ページ数:
7
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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