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Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress

著者名:
Y. Iwahashi
M. Miyazato
M. Miyajima
Y. Yonezawa
T. Kato
H. Fujiwara
K. Hamada
A. Otsuki
H. Okumura
さらに 4 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
218
終了ページ:
221
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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