Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

著者名:

M. Hauck

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

111

終了ページ:

114

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

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