Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters | 東京工業大学附属図書館文献データベース

Blank Cover Image

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters

著者名:

さらに 4 件

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

63

終了ページ:

66

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

類似資料:

1 国際会議録 Optimization of VLS Growth Process for 4H-SiC P/N Junctions S. Sejil, M. Lazar, F. Cayrel, D. Carole, C. Brylinski Trans Tech Publications	7 国際会議録 Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension Raynaud, C., Lazar, M., Planson, D., Chante, J.P., Sassi, Z. Trans Tech Publications
2 国際会議録 VLS Grown 4H-SiC Buried P⁺ Layers for JFET Lateral Structures S. Sejil, F. Laariedh, M. Lazar, D. Carole, C. Brylinski Trans Tech Publications	8 国際会議録 The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study Lazar, M., Cardinali, G., Raynaud, C., Poggi, A., Planson, D., Nipoti, R., Chante, J.P. Trans Tech Publications
3 国際会議録 P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth Lazar, M., Jacquier, C., Dubois, C., Raynaud, C., Ferro, G., Planson, D., Brosselard, P., Monteil, Y., Chante, J. P. Trans Tech Publications	9 国際会議録 SiC-Based Current Limiter Devices Chante, J.P., Tournier, D., Planson, D., Raynaud, C., Lazar, M., Locatelli, M.L., Brosselard, P. Trans Tech Publications
4 国際会議録 Buried Selective Growth of p-Doped SiC by VLS Epitaxy D. Carole, S. Berckmans, A. Vo-Ha, M. Lazar, D. Tournier Trans Tech Publications	10 国際会議録 Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly PTyped Doped 4H-SiC Layer Selectively Grown by VLS Transport N. Thierry-Jebali, A. Vo-Ha, D. Carole, M. Lazar, G. Ferro Trans Tech Publications
5 国際会議録 Characterization of a 4H-SiC High Power Density Controlled Current Limiter Tournier, D., Godignon, Ph., Montserrat, J., Planson, D., Raynaud, C., Lazar, M., Chante, J.P., Sarrus, F., Bonhomme, … Trans Tech Publications	11 国際会議録 Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport N. Thierry-Jebali, M. Lazar, A. Vo Ha, D. Carole, V. Soulière Trans Tech Publications
6 国際会議録 OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension Wang, S.R., Raynaud, C., Planson, D., Lazar, M., Chante, J.P. Trans Tech Publications	12 国際会議録 p-Doped SiC Growth on Diamond Substrate by VLS Transport A. Vo Ha, D. Carole, M. Lazar, D. Tournier, F. Cauwet Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12