Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect

Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect

著者名:

K. Mochizuki

掲載資料名:

Silicon Carbide and Related Materials 2016

シリーズ名:

Materials science forum

シリーズ巻号:

897

発行年:

2017

開始ページ:

47

終了ページ:

50

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00066569
シリーズID:	PA00000012
会議名:	ECSCRM
回次:	2016
会議開催地:	Halkidiki, Greece
会議開催年:	2016.09.25-2016.09.29
論文注記:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

類似資料:

1 国際会議録 Effect of H₂ Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling S.Y. Ji, K. Kojima, R. Kosugi, S. Saito, Y. Sakuma Trans Tech Publications	7 国際会議録 Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth Ishida, Y., Takahashi, T., Kojima, K., Okumura, H., Arai, K., Yoshida, S. Trans Tech Publications
2 国際会議録 Filling of Deep Trench by Epitaxial SiC Growth K. Kojima, A. Nagata, S. Ito, Y. Sakuma, R. Kosugi Trans Tech Publications	8 国際会議録 Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata Trans Tech Publications
3 国際会議録 Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata Trans Tech Publications	9 国際会議録 Investigation of In-Grown Dislocations in 4II-SiC Epitaxial Layers Kojima, K., Kato, T., Kuroda, S., Okumura, H., Arai, K. Trans Tech Publications
4 国際会議録 The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle K. Masumoto, K. Kojima, H. Okumura Trans Tech Publications	10 国際会議録 Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth K. Kojima, H. Okumura, K. Arai Trans Tech Publications
5 国際会議録 Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT T. Miyazawa, S.Y. Ji, K. Kojima, Y. Ishida, K. Nakayama Trans Tech Publications	11 国際会議録 Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers S.Y. Ji, K. Kojima, Y. Ishida, H. Yamaguchi, S. Saito Trans Tech Publications
6 国際会議録 Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth K. Kojima, S. Kuroda, H. Okumura, K. Arai Trans Tech Publications	12 国際会議録 4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate K. Kojima, S. Ito, J. Senzaki, H. Okumura Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12