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Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H2 Etching

著者名:
X.F. Chen
F.S. Zhang
X.L. Yang
Y. Peng
X.J. Xie
T. Li
X.B. Hu
X.G. Xu
G.L. Li
R.Q. Wang
さらに 5 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
19
終了ページ:
23
総ページ数:
5
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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