Sub-0.1-µm NMOS transistors fabricated using point-source x-ray lithography

Sub-0.1-µm NMOS transistors fabricated using point-source x-ray lithography

著者名:

掲載資料名:

Electron-beam, X-ray, EUV, and ion-beam submicrometer lithographies for manufacturing V : 20-21 February 1995, Santa Clara, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2437

発行年:

1995

開始ページ:

126

終了ページ:

133

総ページ数:

8

出版情報:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819417855 [0819417858]

言語:

英語

請求記号:

P63600/2437

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00057640
シリーズID:	PA00000029
会議名:	Symposium on electron-beam, X-ray, EUV, and ion-beam submicrometer lithographies for manufacturing
回次:	5th
会議開催地:	Santa Clara, CA, USA
会議開催年:	1995.02.20-1995.02.21
論文注記:	5th Symposium on electron-beam, X-ray, EUV, and ion-beam submicrometer lithographies for manufacturing, February 20-21, 1995, Santa Clara, CA, USA. 2437-08

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