Use of nitrogen as a carrier gas in LP-MOCVD for growth of GaAs AlGaAs and quantum well infrared photodetectors heterostructures

Use of nitrogen as a carrier gas in LP-MOCVD for growth of GaAs AlGaAs and quantum well infrared photodetectors heterostructures

著者名:

掲載資料名:

Optoelectronic integrated circuit materials, physics, and devices : 6-9 February 1995, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2397

発行年:

1995

開始ページ:

733

終了ページ:

744

総ページ数:

12

出版情報:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819417442 [0819417440]

言語:

英語

請求記号:

P63600/2397

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00057600
シリーズID:	PA00000029
会議名:	Symposium on optoelectronic integrated circuit materials, physics, and devices
回次:	1994
会議開催地:	San Jose, CA, USA
会議開催年:	1995.02.06-1995.02.09
論文注記:	1994 Symposium on optoelectronic integrated circuit materials, physics, and devices, February 6-9, 1995, San Jose, CA, USA. 2397-83

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