Photoluminescence from strained SiGe/Si quantum well structures grown by Si molecular beam epitaxy

Photoluminescence from strained SiGe/Si quantum well structures grown by Si molecular beam epitaxy

著者名:

掲載資料名:

Second International Conference on Thin Film Physics and Applications : '94 TFPA : 15-17 April 1994, Shanghai, China

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2364

発行年:

1994

開始ページ:

412

終了ページ:

416

総ページ数:

5

出版情報:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819417084 [0819417084]

言語:

英語

請求記号:

P63600/2364

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00057567
シリーズID:	PA00000029
会議名:	International Conference on Thin Film Physics and Applications : TFPA
回次:	2nd
会議開催地:	Shanghai, China
会議開催年:	1994.04.15-1994.04.17
論文注記:	2nd International Conference on Thin Film Physics and Applications : TFPA, April 15-17, 1994, Shanghai, China. 2364-69

類似資料:

1 国際会議録 AllnGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE Xu,Z.-T., Yang,G.-W., Xu,J.-Y., Zhang,J.-M., Chen,C.-H., Chen,L.-H., Shen,G.-D. SPIE-The International Society for Optical Engineering	7 国際会議録 STRAINED InGaAs/GaAs MULTIPLE QUANTUM WELLS GROWN ON PLANAR AND PRE-PATTERNED GaAs(100) SUBSTRATES VIA MOLECULAR BEAM EPITAXY: APPLICATIONS TO LIGHT MODULATORS … Chen, Li, Hu, Kezhong, Bajkumar, K. C., Guha, S., Kapre, R., Madhukar, A. Materials Research Society
2 国際会議録 InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for tong-wavelength infrared detection Zhang,D.H., Zhang,W.M., Zhang,P.H., Osotchan,T., Yoon,S.F., Shi,X., Liu,R., Wee,T.S. SPIE - The International Society for Optical Engineering	8 国際会議録 The role of non-radiative defects in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy Buyanova,I.A., Chen,W.M., Pozina,G., Monemar,B., Ni,W.X., Hansson,G.V. Trans Tech Publications
3 国際会議録 Strained InGaAs ridge quantum wires structure grown by molecular beam epitaxy on nonplanar substrate Niu,Z., Zhou,Z., Lin,Y., Zhang,Y., Li,X., Hu,X. SPIE-The International Society for Optical Engineering	9 国際会議録 Two-dimensional growth and structural characterization of oxide ceramic thin films grown by laser molecular beam epitaxy (Invited Paper) Yang,G., Lu,H., Cui,D., Wang,H., Zhou,Y., Chen,Z. SPIE-The International Society for Optical Engineering
4 国際会議録 Photoluminescence Of GaN Grown By Molecular Beam Epitaxy On Freestanding GaN Template Reshchikov, M.A., Yun, F., Huang, D., He, L., Morkoc, H., Park, S.S., Lee, K.Y. Materials Research Society	10 国際会議録 Temperature Dependent Photoluminescence Studies of Molecular Beam Epitaxy Grown Silicon S-Doped Pseudomorphic AIGaAs/InGaAs/GaAs Quantum Wells Srinivasan, T., Muralidharan, R., Singh, S.N., Mehta, S.K., Jain, R.K. SPIE-The International Society for Optical Engineering
5 国際会議録 Comparison of cathodoluminescence and photoluminescence of CdSeTe films grown on Si by molecular beam epitaxy Campo, E. M., Hierl, T., Hwang, J. C. M., Chen, Y., Brill, G., Dhar, N. K. SPIE - The International Society of Optical Engineering	11 国際会議録 PHOTOLUMINESCENCE FATIGUE IN LATERALLY-ORDERED (GaP)2/(InP)2 SHORT-PERIOD-SUPERLATTICES (SPS) GROWN BY MOLECULAR BEAM EPITAXY Liu, X. C., Gu, S. Q., Reuter, E. E., Bishop, S. G., Chen, A. C., Moy, A. M., Cheng, K. Y., Hsieh, K. C. MRS - Materials Research Society
6 国際会議録 Growth and characterization of boron delta function shaped doping layer in silicon by molecular beam epitaxy X.J. Chen, Q.H. Wang, D.W. Gong, Y. Yang, H.Q. Lü Society of Photo-optical Instrumentation Engineers	12 国際会議録 INTERFACIAL QUALITY OF STRAINED-LAYER InGaAs/GaAs QUANTUM WELL LASERS GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY Zhang, G., Ovtchinnikov, A., Pessa, M. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12