High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing

High-quality sub-5-nm oxynitride dielectric films grown on silicon in a nitric oxide ambient using rapid thermal processing

著者名:

掲載資料名:

Microelectronics technology and process integration : 20-21 October 1994, Austin, Texas

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2335

発行年:

1994

開始ページ:

265

終了ページ:

270

総ページ数:

6

出版情報:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819416681 [0819416681]

言語:

英語

請求記号:

P63600/2335

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00057538
シリーズID:	PA00000029
会議名:	Symposium on microelectronics technology and process integration
回次:	1994
会議開催地:	Austin, TX, USA
会議開催年:	1994.10.20-1994.10.21
論文注記:	1994 Symposium on microelectronics technology and process integration, October 20-21, 1994, Austin, TX, USA. 2335-30

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