(608e) Effects of Point Defects On the Oxygen Precipitates of Si Wafer Grown by Czochralski Method

(608e) Effects of Point Defects On the Oxygen Precipitates of Si Wafer Grown by Czochralski Method

著者名:

掲載資料名:

2011 AIChE annual meeting, October 16-21, Minneapolis Convention Center, Minneapolis, MN : conference proceedings : Non-topical conferences

シリーズ名:

AIChE Conference Proceedings

シリーズ巻号:

P-267

発行年:

2011

パート:

Catalysis & Reaction Engineering Division

総ページ数:

11

出版情報:

New York: American Institute of Chemical Engineers

ISBN:

9780816910700 [0816910707]

言語:

英語

請求記号:

A08000/2011 [CD-ROM]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00061222
シリーズID:	PA00000008
会議名:	AIChE annual meeting ; Particle Technology Forum ; North American Mixing Forum ; Computational Molecular Science and Engineering Forum ; Nanoscale Science and Engineering Forum ; Sustainable Engineering Forum ; Chemical Engineering & the Law Forum
回次:	2011
会議開催地:	Minneapolis, MN, USA
会議開催年:	2011.10.16-2011.10.21
論文注記:	2011 AIChE annual meeting, Minneapolis Convention Center, Minneapolis, MN, October 16-21, 2011. Catalysis and Reaction Engineering Division (Paper233171)

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