Tribological, Thermal and Kinetic Attributes of Copper and Silicon Dioxide CMP Processes

Tribological, Thermal and Kinetic Attributes of Copper and Silicon Dioxide CMP Processes

著者名:

掲載資料名:

Electrodeposition Processes in Semiconductor Device Fabrication

シリーズ名:

AIChE Conference Proceedings

シリーズ巻号:

P-213(T8)

発行年:

2004

開始ページ:

91c

総ページ数:

8

出版情報:

New York: American Institute of Chemical Engineers

ISBN:

9780816909650 [0816909652]

言語:

英語

請求記号:

A08000/2004 [CD-ROM]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00061165
シリーズID:	PA00000008
会議名:	AIChE Annual Meeting
回次:	2004
会議開催地:	Austin, TX, USA
会議開催年:	2004.11.07-2004.11.12
論文注記:	AIChE Annual Meeting, November 7-12, 2004, Austin, Texas

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