Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs

Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

858

発行年:

2016

開始ページ:

868

終了ページ:

871

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

言語:

英語

請求記号:

M23650 [v.858]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00055306
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
回次:	16th
会議開催地:	Giardini Naxos, Italy
会議開催年:	2015.10.04-2015.10.09
論文注記:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

類似資料:

1 国際会議録 Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature T. Matsuda, T. Yokoseki, S. Mitomo, K. Murata, T. Makino Trans Tech Publications	7 国際会議録 Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, S. Nozaki Trans Tech Publications
2 国際会議録 Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments T. Yokoseki, H. Abe, T. Makino, S. Onoda, Y. Tanaka Trans Tech Publications	8 国際会議録 Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays Yoshikawa,M., Saitoh,K., Ohshima,T., Itoh,H., Nashiyama,I., Takahashi,Y., Ohnishi,K., Okumura,H., Yoshida,S. Trans Tech Publications
3 国際会議録 Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide Ohshima, T., Lee, K. K., Ohi, A., Yoshikawa, M., Itoh, H. Trans Tech Publications	9 国際会議録 Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs Ahyi, A.C., Wang, S.R., Williams, J.R. Trans Tech Publications
4 国際会議録 Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide Ohshima, T., Lee, K.K., Ohi, A., Yoshikawa, M., Itoh, H. Trans Tech Publications	10 国際会議録 Radiation effect on PMMA POF under gamma-ray irradiation K. Toh, S. Nagata, B. Tsuchiya, T. Shikama SPIE - The International Society of Optical Engineering
5 国際会議録 Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays S. Hishiki, S.A. Reshanov, T. Ohshima, H. Itoh, G. Pensl Trans Tech Publications	11 国際会議録 Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces K. Ariyoshi, S. Harada, J. Senzaki, T. Kojima, Y. Kobayashi Trans Tech Publications
6 国際会議録 Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays S. Hishiki, N. Iwamoto, T. Ohshima, H. Itoh, K. Kojima Trans Tech Publications	12 国際会議録 Hydrogen gas evolution from water dispersing nanoparticles irradiated with gamma-ray Seino, S., Fujimoto, R., Yamamoto, T. A., Katsura, M., Okuda, S., Okitsu, K., Oshima, R. MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12