Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti<sub>3</sub>SiC<sub>2</sub> Phase

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

858

発行年:

2016

開始ページ:

553

終了ページ:

556

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

言語:

英語

請求記号:

M23650 [v.858]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00055306
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
回次:	16th
会議開催地:	Giardini Naxos, Italy
会議開催年:	2015.10.04-2015.10.09
論文注記:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

類似資料:

1 国際会議録 A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing T. Abi-Tannous, M. Soueidan, G. Ferro, M. Lazar, B. Toury Trans Tech Publications	7 国際会議録 Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC F. Laariedh, M. Lazar, P. Cremillieu, J.L. Leclercq, D. Planson Trans Tech Publications
2 国際会議録 Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SIC D.M. Nguyen, C. Raynaud, M. Lazar, H. Vang, D. Planson Trans Tech Publications	8 国際会議録 A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery Brosselard, P., Bouchet, T., Planson, D., Scharnholz, S., Paques, G., Lazar, M., Raynaud, C., Chante, J. P., Spahn, E. Trans Tech Publications
3 国際会議録 Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts Ferro, G., Soueidan, M., Jacquier, C., Godignon, P., Stauden, T., Pezoldt, J., Lazar, M., Montserrat, J., Monteil, Y. Trans Tech Publications	9 国際会議録 Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes H. Vang, S. Scharnholz, C. Raynaud, M. Lazar, G. Pâques Trans Tech Publications
4 国際会議録 On the Ti₃SiC₂ Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts M.R. Jennings, C.A. Fisher, D. Walker, A. Sanchez, A. Pérez-Tomás Trans Tech Publications	10 国際会議録 Titanium-Based Ohmic Contact on p-Type 4H-SiC Jung, K.H., Cho, N.I., Lee, J.H., Yang, S.J., Kim, C.K., Lee, B.-T., Rim, K.H., Kim, N.-K., Kim, E.-D. Trans Tech Publications
5 国際会議録 P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth Lazar, M., Jacquier, C., Dubois, C., Raynaud, C., Ferro, G., Planson, D., Brosselard, P., Monteil, Y., Chante, J. P. Trans Tech Publications	11 国際会議録 Titanium-Based Ohmic Contact on p-Type 4H-SiC Jung, K.H., Cho, N.I., Lee, J.H., Yang, S.J., Kim, C.K., Lee, B.-T., Rim, K.H., Kim, N.-K., Kim, E.-D. Trans Tech Publications
6 国際会議録 Contact Resistivity of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC Nipoti, Roberta, Moscatelli, Francesco, Scorzoni, Andrea, Poggi, Antonella, Cardinali, Gian Carlo, Lazar, Mihai, … Materials Research Society	12 国際会議録 3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase O. Kim-Hak, M. Soueidan, G. Ferro, O. Dezellus, A. Andreadou Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase

類似資料:

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase