Pragmatic Approach to the Characterization of SiC/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall Measurements
- 著者名:
- 掲載資料名:
- Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 858
- 発行年:
- 2016
- 開始ページ:
- 477
- 終了ページ:
- 480
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710427 [3035710422]
- 言語:
- 英語
- 請求記号:
- M23650 [v.858]
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society | |
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8
国際会議録
Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
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