An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices

An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

858

発行年:

2016

開始ページ:

422

終了ページ:

428

総ページ数:

7

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

言語:

英語

請求記号:

M23650 [v.858]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00055306
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
回次:	16th
会議開催地:	Giardini Naxos, Italy
会議開催年:	2015.10.04-2015.10.09
論文注記:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

類似資料:

1 国際会議録 Repetitive Short-Circuit Tests on SiC VMOS Devices M. Berthou, P. Bevilacqua, J.B. Fonder, D. Tournier Trans Tech Publications	7 国際会議録 High Power Density SiC 450A AccuMOSFET for Current Limiting Applications D. Tournier, P. Bevilacqua, D. Planson, H. Morel, P. Brosselard Trans Tech Publications
2 国際会議録 Integration of Temperature and Current Sensors in 4H-SiC VDMOS M. Berthou, P. Godignon, P. Brosselard, D. Tournier, J. Millán Trans Tech Publications	8 国際会議録 Cryogenic to High Temperature Exploration of 4H-SiC W-SBD M. Berthou, B. Asllani, P. Brosselard, P. Godignon Trans Tech Publications
3 国際会議録 Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range B. Asllani, M. Berthou, D. Tournier, P. Brosselard, P. Godignon Trans Tech Publications	9 国際会議録 A Step toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT D. Tournier, P. Bevilacqua, P. Brosselard, D. Planson Trans Tech Publications
4 国際会議録 High Temperature Capability of High Voltage 4H-SiC JBS M. Berthou, P. Godignon, B. Vergne, P. Brosselard Trans Tech Publications	10 国際会議録 Short-Circuit Capability Exploration of Silicon Carbide Devices M. Berthou, D. Planson, D. Tournier Trans Tech Publications
5 国際会議録 SiC-Based Current Limiter Devices Chante, J.P., Tournier, D., Planson, D., Raynaud, C., Lazar, M., Locatelli, M.L., Brosselard, P. Trans Tech Publications	11 国際会議録 Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET S. Niu, M. Berthou, D. Tournier Trans Tech Publications
6 国際会議録 Current Sensing for SiC Power Devices Tournier, D., Vellvehi, M., Godignon, P., Montserrat, J., Planson, D., Sarrus, F. Trans Tech Publications	12 国際会議録 New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process P. Brosselard, D. Tournier, M. Vellvehi, J. Montserrat, P. Godignon, J. Millan Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12