Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

858

発行年:

2016

開始ページ:

167

終了ページ:

172

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

言語:

英語

請求記号:

M23650 [v.858]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00055306
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
回次:	16th
会議開催地:	Giardini Naxos, Italy
会議開催年:	2015.10.04-2015.10.09
論文注記:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

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2 国際会議録 SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor A.A. Burk, D. Tsvetkov, D. Barnhardt, M.J. O'Loughlin, L. Garrett Trans Tech Publications	8 国際会議録 Multi-wafer VPE growth of highly uniform SiC epitaxial layers O'Loughlin, M. J., Nordby, H. D. Jr., Burk, A. A. Jr. MRS-Materials Research Society
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