Bulk Growth of Large Area SiC Crystals

Bulk Growth of Large Area SiC Crystals

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

シリーズ名:

Materials science forum

シリーズ巻号:

858

発行年:

2016

開始ページ:

5

終了ページ:

10

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

言語:

英語

請求記号:

M23650 [v.858]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00055306
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
回次:	16th
会議開催地:	Giardini Naxos, Italy
会議開催年:	2015.10.04-2015.10.09
論文注記:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

類似資料:

1 国際会議録 Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization R.T. Leonard, M.J. Paisley, S. Bubel, J.J. Sumakeris, A.R. Powell, Y. Khlebnikov, J.C. Seaman, J. Ambati, A.A. Burk, … Trans Tech Publications	7 国際会議録 Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor Burk, A. A., O'Loughlin, M. J., Paisley, M. J., Powell, A. R., Brady, M. F., Leonard, R. T., Muller, S. G., Allen, S. T. Trans Tech Publications
2 国際会議録 Dislocation Characterization in 4H-SiC Crystals J.J. Sumakeris, R.T. Leonard, E. Deyneka, Y. Khlebnikov, A.R. Powell Trans Tech Publications	8 国際会議録 100 mm 4HN-SiC Wafers with Zero Micropipe Density R.T. Leonard, Y. Khlebnikov, A.R. Powell, C. Basceri, M.F. Brady Trans Tech Publications
3 国際会議録 Defect Status in SiC Manufacturing E. Berkman, R.T. Leonard, M.J. Paisley, Y. Khlebnikov, M.J. O'Loughlin Trans Tech Publications	9 国際会議録 High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift Das, M.K., Sumakeris, J.J., Paisley, M.J., Powell, A. Trans Tech Publications
4 国際会議録 SiC Warm-Wall Planetary VP E Growth on Multiple 100-mm Diameter Wafers Burk, A.A., O'Loughlin, M.J., Paisley, M.J., Powell, A.R., Brady, M.F, Leonard, R.T., McClure, D.A. Trans Tech Publications	10 国際会議録 Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method J.Q. Guo, Y. Yang, F.Z. Wu, J.J. Sumakeris, R.T. Leonard Trans Tech Publications
5 国際会議録 Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications Powell, A.R., Sumakeris, J.J., Leonard, R.T., Brady, M.F., Muller, St.G., Tsvetkov, V.F., Hobgood, H.McD., Burk, A.A., … Materials Research Society	11 国際会議録 Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition Kordina,O., Irvine,K., Sumakeris,J., Kong,H.S., Paisley,M.J., ,C.H.Carter,Jr. Trans Tech Publications
6 国際会議録 Large Diameter 4H-SiC Substrates for Commercial Power Applications Powell, A.R., Leonard, R.T., Brady, M.F., Muller, St.G., Tsvetkov, V.F., Trussell, R., Sumakeris, J.J., Hobgood, H.McD., … Trans Tech Publications	12 国際会議録 Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers B.A. Hull, J.J. Sumakeris, M.J. O'Loughlin, Q.J. Zhang, J. Richmond Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12