High-Temperature Operation of Electrostatically-Excited Single-Crystalline 4H-SiC Microcantilever Resonators

High-Temperature Operation of Electrostatically-Excited Single-Crystalline 4H-SiC Microcantilever Resonators

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

914

終了ページ:

918

総ページ数:

5

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

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1 国際会議録 Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching K. Sato, K. Adachi, H. Okamoto, H. Yamaguchi, T. Kimoto Trans Tech Publications	7 国際会議録 Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films Okada, T., Okamoto, K., Ochi, K., Higashimine, K., Kimoto, T. Trans Tech Publications
2 国際会議録 Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals K. Danno, S. Yamaguchi, H. Kimoto, K. Sato, T. Bessho Trans Tech Publications	8 国際会議録 Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
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