Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

814

終了ページ:

817

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

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1 国際会議録 SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices T. Chailloux, C. Calvez, N. Thierry-Jebali, D. Planson, D. Tournier Trans Tech Publications	7 国際会議録 Process Optimization for High Temperature SiC Lateral Devices M. Soueidan, M. Lazar, D.M. Nguyen, D. Tournier, C. Raynaud Trans Tech Publications
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3 国際会議録 Characterization of a 4H-SiC High Power Density Controlled Current Limiter Tournier, D., Godignon, Ph., Montserrat, J., Planson, D., Raynaud, C., Lazar, M., Chante, J.P., Sarrus, F., Bonhomme, … Trans Tech Publications	9 国際会議録 Pressureless Silver Sintering Die-Attach for SiC Power Devices S. Hascoët, C. Buttay, D. Planson, R. Chiriac, A. Masson Trans Tech Publications
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6 国際会議録 High Power Density SiC 450A AccuMOSFET for Current Limiting Applications D. Tournier, P. Bevilacqua, D. Planson, H. Morel, P. Brosselard Trans Tech Publications	12 国際会議録 Short-Circuit Capability Exploration of Silicon Carbide Devices M. Berthou, D. Planson, D. Tournier Trans Tech Publications

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