Short-Circuit Capability Exploration of Silicon Carbide Devices

Short-Circuit Capability Exploration of Silicon Carbide Devices

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

810

終了ページ:

813

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

類似資料:

1 国際会議録 Repetitive Short-Circuit Tests on SiC VMOS Devices M. Berthou, P. Bevilacqua, J.B. Fonder, D. Tournier Trans Tech Publications	7 国際会議録 Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range B. Asllani, M. Berthou, D. Tournier, P. Brosselard, P. Godignon Trans Tech Publications
2 国際会議録 Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET S. Niu, M. Berthou, D. Tournier Trans Tech Publications	8 国際会議録 Integration of Temperature and Current Sensors in 4H-SiC VDMOS M. Berthou, P. Godignon, P. Brosselard, D. Tournier, J. Millán Trans Tech Publications
3 国際会議録 Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel S.Q. Niu, M. Berthou, D. Tournier Trans Tech Publications	9 国際会議録 Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature T. Chailloux, C. Calvez, D. Tournier, D. Planson Trans Tech Publications
4 国際会議録 Current Sensing for SiC Power Devices Tournier, D., Vellvehi, M., Godignon, P., Montserrat, J., Planson, D., Sarrus, F. Trans Tech Publications	10 国際会議録 600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide G. Civrac, F. Laariedh, N. Thierry Jebali, M. Lazar, D. Planson Trans Tech Publications
5 国際会議録 An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices J.B. Fonder, P. Brosselard, D. Tournier, M. Berthou, B. Vergne Trans Tech Publications	11 国際会議録 Reliability of short channel silicon SOI VSI Devices and Circuits Ioannou E. D. Kluwer Academic Publishers
6 国際会議録 SiC-Based Current Limiter Devices Chante, J.P., Tournier, D., Planson, D., Raynaud, C., Lazar, M., Locatelli, M.L., Brosselard, P. Trans Tech Publications	12 国際会議録 Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes D.M. Nguyen, R. Huang, L.V. Phung, D. Planson, M. Berthou Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12