Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)

Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

745

終了ページ:

748

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

類似資料:

1 国際会議録 Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility H. Yoshioka, T. Nakamura, J. Senzaki, A. Shimozato, Y. Tanaka Trans Tech Publications	7 国際会議録 SUBTHRESHOLD CHARACTERISTICS AND INTERFACE STATE DENSITY OF a-Si:H TFT Maeda, K., Koyanagi, H., Jinnai, T. Materials Research Society
2 国際会議録 Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides … Senzaki, J., Shimozato, A., Fukuda, K. Trans Tech Publications	8 国際会議録 Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers J. Senzaki, A. Shimozato, K. Fukuda Trans Tech Publications
3 国際会議録 Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration J. Senzaki, A. Shimozato, K. Fukuda, K. Arai Trans Tech Publications	9 国際会議録 Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance K. Fukuda, S. Harada, J. Senzaki, M. Okamoto, Y. Tanaka Trans Tech Publications
4 国際会議録 Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces J. Senzaki, A. Shimozato, K. Kojima, S. Harada, K. Ariyoshi Trans Tech Publications	10 国際会議録 Hall Effect Measurements At Low Temperature Of Arsenic Implanted Into 4H-Silicon Carbide Senzaki, J., Fukuda, K., Ishida, Y., Tanaka, Y., Tanoue, H., Kobayashi, N., Tanaka, T., Arai, K. Materials Research Society
5 国際会議録 Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer J. Senzaki, A. Shimozato, K. Koshikawa, Y. Tanaka, K. Fukuda Trans Tech Publications	11 国際会議録 A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kushibe, M., Kojima, K., Kosugi, R., Suzuki, S., Harada, S., Suzuki, T., Tanaka, T., Arai, K. Trans Tech Publications
6 国際会議録 Challenges of High-Performance and High-Reliablity in SiC MOS Structures J. Senzaki, A. Shimozato, K. Kojima, T. Kato, Y. Tanaka Trans Tech Publications	12 国際会議録 A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing Fukuda, K., Senzaki, J., Kushibe, M., Kojima, K., Kosugi, R., Suzuki, S., Harada, S., Suzuki, T., Tanaka, T., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12