Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

656

終了ページ:

659

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

類似資料:

1 国際会議録 Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET) A. Hürner, H. Mitlehner, T. Erlbacher, A.J. Bauer, L. Frey Trans Tech Publications	7 国際会議録 Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices A. Bolotnikov, P.A. Losee, P. Deeb, M.L. Wang, G. Dunne Trans Tech Publications
2 国際会議録 Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability A. Hürner, T. Erlbacher, H. Mitlehner, A.J. Bauer, L. Frey Trans Tech Publications	8 国際会議録 Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs C. Strenger, V. Häublein, T. Erlbacher, A.J. Bauer, H. Ryssel Trans Tech Publications
3 国際会議録 Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices L. di Benedetto, G.D. Licciardo, T. Erlbacher, A.J. Bauer, A. Rubino Trans Tech Publications	9 国際会議録 Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices M. Snook, T. McNutt, C. Kirby, H. Hearne, V. Veliadis Trans Tech Publications
4 国際会議録 Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices H. Elahipanah, A. Salemi, C.M. Zetterling, M. Östling Trans Tech Publications	10 国際会議録 Monolithically Integrated Solid-State-Circuit-Breaker for High Power Applications A. Huerner, T. Erlbacher, A.J. Bauer, L. Frey Trans Tech Publications
5 国際会議録 Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs M. Albrecht, T. Erlbacher, A.J. Bauer, L. Frey Trans Tech Publications	11 国際会議録 Experimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET M. Albrecht, A. Huerner, T. Erlbacher, A.J. Bauer, L. Frey Trans Tech Publications
6 国際会議録 4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density J. Schoeck, J. Buettner, M. Rommel, T. Erlbacher, A.J. Bauer Trans Tech Publications	12 国際会議録 Grayscale Junction Termination for High-Voltage SiC Devices E.A. Imhoff, F.J. Kub, K.D. Hobart Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12