Blank Cover Image

Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes

著者名:
掲載資料名:
Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
シリーズ名:
Materials science forum
シリーズ巻号:
821-823
発行年:
2015
開始ページ:
600
終了ページ:
603
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

H. Elahipanah, N. Thierry-Jebali, S.A. Reshanov, W. Kaplan, A. Zhang, J.K. Lim, M. Bakowski, M. Östling, A. Schöner

Trans Tech Publications
7 国際会議録 Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density

H. Fujiwara, M. Konishi, T. Ohnishi, T. Nakamura, K. Hamada

Trans Tech Publications
2 国際会議録 Evaluation of Buried Grid JBS Diodes

J.K. Lim, D. Peftitsis, D.P. Sadik, M. Bakowski, H.P. Nee

Trans Tech Publications
8 国際会議録 Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers

Reshanov, S.A., Klettke, O., Pensl, G., Choyke, W.J.

Trans Tech Publications
3 国際会議録 A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors

J.K. Lim, L. Östlund, Q. Wang, W. Kaplan, S.A. Reshanov

Trans Tech Publications
9 国際会議録 Optimization of 1700V 4H-SiC JBS Diode Parameters

R.K. Sharma, P. Hazdra, S. Popelka, A. Mihaila, H. Bartolf

Trans Tech Publications
4 国際会議録 Circuit Modeling of Vertical Buried-Grid SiC JFETs

G. Tolstoy, D. Peftitsis, J.K. Lim, M. Bakowski, H.P. Nee

Trans Tech Publications
10 国際会議録 Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures

K.H. Kim, Y.H. Kang, J.H. Lee, E.S. Jung, I.H. Kang

Trans Tech Publications
5 国際会議録 Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching

A.Z. Zhang, S.A. Reshanov, A. Schöner, W. Kaplan, N. Kwietniewski

Trans Tech Publications
11 国際会議録 Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT

K.D. Hobart, E.A. Imhoff, F.J. Kub, A.R. Hefner, T.H. Duong

Trans Tech Publications
6 国際会議録 Lifetime Investigations of 4H-SiC PiN Power Diodes

S.A. Reshanov, W. Bartsch, B. Zippelius, G. Pensl

Trans Tech Publications
12 国際会議録 Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers

Zhu, L., Chow, T.P., Jones, K.A., Scozzie, C.J., Agarwal, A.K.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12