Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization

Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

567

終了ページ:

570

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

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1 国際会議録 Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope T. Katsuno, Y. Watanabe, T. Ishikawa, H. Fujiwara, M. Konishi Trans Tech Publications	7 国際会議録 Reverse Characteristics of a 4H-SiC Schottky Barrier Diode Hatakeyama, T., Shinohe, T. Trans Tech Publications
2 国際会議録 Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode T. Ishikawa, T. Katsuno, Y. Watanabe, H. Fujiwara, T. Endo Trans Tech Publications	8 国際会議録 Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode A. Kinoshita, T. Nishi, T. Ohyanagi, T. Yatsuo, K. Fukuda Trans Tech Publications
3 国際会議録 Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face Kojima, K., Ohno, T., Fujimoto, T., Katsuno, M., Ohtani, N., Nishio, J., Ishida, Y., Takahashi, T., Suzuki, T., Tanaka, … Trans Tech Publications	9 国際会議録 Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes Nakamura, T., Miyanagi, T., Kamata, I., Tsuchida, H. Trans Tech Publications
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5 国際会議録 Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments Kim, D.H., Na, H.J., Jung, S.Y., Song, I.B., Um, M.Y., Song, H.K., Jeong, J.K., Lee, J.B., Kim, H.J. Trans Tech Publications	11 国際会議録 Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates T. Aigo, H. Tsuge, H. Yashiro, T. Fujimoto, M. Katsuno Trans Tech Publications
6 国際会議録 Reverse Characteristics of a 4H-SiC Schottky Barrier Diode Hatakeyama, T., Shinohe, T. Trans Tech Publications	12 国際会議録 Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes Fujiwara, H., Kimoto, T., Tojo, T., Matsunami, H. Trans Tech Publications

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