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Influence of Phosphorous Auto-Doping on the Characteristics of SiO2/SiC Gate Dielectrics

著者名:
掲載資料名:
Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
シリーズ名:
Materials science forum
シリーズ巻号:
821-823
発行年:
2015
開始ページ:
492
終了ページ:
495
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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