Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC

Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

440

終了ページ:

443

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

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1 国際会議録 Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C K. Smedfors, L. Lanni, M. Östling, C.M. Zetterling Trans Tech Publications	7 国際会議録 Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs A. Salemi, H. Elahipanah, C.M. Zetterling, M. Östling Trans Tech Publications
2 国際会議録 Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices Lee, H.S., Domeij, M., Zetterling, C.M., Ostling, M., Lu, J. Trans Tech Publications	8 国際会議録 4.5-kV 20-mΩ.cm² Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension H. Elahipanah, A. Salemi, C.M. Zetterling, M. Östling Trans Tech Publications
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5 国際会議録 Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges A. Salemi, H. Elahipanah, C.M. Zetterling, M. Östling Trans Tech Publications	11 国際会議録 4H-SiC Power BJTs with High Current Gain and Low On-Resistance H.S. Lee, M. Domeij, C.M. Zetterling, M. Ostling Trans Tech Publications
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