3C-SiC Crystal on Sapphire by Solution Growth Method

3C-SiC Crystal on Sapphire by Solution Growth Method

著者名:

掲載資料名:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

シリーズ名:

Materials science forum

シリーズ巻号:

821-823

発行年:

2015

開始ページ:

185

終了ページ:

188

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054285
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
回次:	2014
会議開催地:	Grenoble, France
会議開催年:	2014.09.21-2014.09.25
論文注記:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

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1 国際会議録 Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method K. Seki, S. Harada, T. Ujihara Trans Tech Publications	7 国際会議録 Solvent Design for High-Purity SiC Solution Growth S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara Trans Tech Publications
2 国際会議録 Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC S. Harada, Y. Yamamoto, K. Seki, T. Ujihara Trans Tech Publications	8 国際会議録 Stability Growth Condition for 3C-SiC Crystals by Solution Technique T. Ujihara, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda Trans Tech Publications
3 国際会議録 Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC T. Umezaki, D. Koike, A. Horio, S. Harada, T. Ujihara Trans Tech Publications	9 国際会議録 Polytype Stability of 4H-SiC Seed Crystal on Solution Growth K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara, Y. Takeda Trans Tech Publications
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5 国際会議録 Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth Y. Yamamoto, K. Seki, S. Kozawa, S. Harada, T. Ujihara Trans Tech Publications	11 国際会議録 Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara Trans Tech Publications
6 国際会議録 Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method K. Seki, R. Tanaka, T. Ujihara, Y. Takeda Trans Tech Publications	12 国際会議録 Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds T. Umezaki, D. Koike, S. Harada, T. Ujihara Trans Tech Publications

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