3C-SiC: New Interest for MEMS Devices

3C-SiC: New Interest for MEMS Devices

著者名:

掲載資料名:

HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France

シリーズ名:

Materials science forum

シリーズ巻号:

806

発行年:

2015

開始ページ:

3

終了ページ:

10

総ページ数:

8

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054271
シリーズID:	PA00000012
会議名:	Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013)
回次:	5th
会議開催地:	Nice, France
会議開催年:	2013.06.17-2013.06.19
論文注記:	5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France

類似資料:

1 国際会議録 Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates A.E. Bazin, T. Chassagne, J.F. Michaud, A. Leycuras, M. Portail, M. Zielinski, E. Collard, D. Alquier Trans Tech Publications	7 国際会議録 Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon M. Zielinski, J.F. Michaud, S. Jiao, T. Chassagne, A.E. Bazin Trans Tech Publications
2 国際会議録 Micromachining of Thin 3C-SiC Films for Mechanical Properties Investigation J.F. Michaud, S. Jiao, A.E. Bazin, M. Portail, T. Chassagne, M. Zielinski, D. Alquier Materials Research Society	8 国際会議録 Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates M. Zielinski, M. Portail, T. Chassagne, Y. Cordier Trans Tech Publications
3 国際会議録 Novel 3C-SiC Microstructure for MEMS Applications J.F. Michaud, M. Portail, R. Khazaka, M. Zielinski, T. Chassagne Trans Tech Publications	9 国際会議録 Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski Trans Tech Publications
4 国際会議録 Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne Trans Tech Publications	10 国際会議録 P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si Anne-Elisabeth Bazin, Jean-François Michaud, Marc Portail, Thierry Chassagne, Marcin Zielinski, Jean-Marc Lecoq, … Materials Research Society
5 国際会議録 Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers S. Jiao, M. Zielinski, J.F. Michaud, T. Chassagne, M. Portail Trans Tech Publications	11 国際会議録 Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne Trans Tech Publications
6 国際会議録 Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud Trans Tech Publications	12 国際会議録 Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates M. Portail, M. Nemoz, M. Zielinski, T. Chassagne Trans Tech Publications

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