Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC

Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

2

開始ページ:

1154

終了ページ:

1157

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms E. Escobedo-Cousin, K. Vassilevski, T. Hopf, N. Wright, A.G. O'Neill Trans Tech Publications	7 国際会議録 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications
2 国際会議録 Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation E. Escobedo-Cousin, K. Vassilevski, T. Hopf, N. Wright, A. O'Neill Trans Tech Publications	8 国際会議録 Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC I.P. Nikitina, K.V. Vassilevski, A.B. Horsfall, N.G. Wright, A.G. O'Neill Trans Tech Publications
3 国際会議録 Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al₂O₃ Gate Dielectric Fabricated on SiC Substrates T. Hopf, K. Vassilevski, E. Escobedo-Cousin, P. King, N.G. Wright Trans Tech Publications	9 国際会議録 Effective Edge Termination Design in SiC VJFET Bhatnagar, P., Horsfall, A. B., Wright, N. G., O'Neill, A, G., Vassilevski, K. V., Johnson, C. M. Trans Tech Publications
4 国際会議録 Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide E. Escobedo-Cousin, K. Vasilevskiy, I.P. Nikitina, N.G. Wright, A.G. O'Neill Trans Tech Publications	10 国際会議録 Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications
5 国際会議録 Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET Bhatnagar, P., Horsfall, A.B., Wright, N.G., Johnson, C.M., Vassilevski, K.V., O'Neill, A.G. Trans Tech Publications	11 国際会議録 Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes Blasciuc-Dimitriu, C., Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications
6 国際会議録 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications	12 国際会議録 First Principles Derivation of Carrier Transport across Metal - SiC Barriers Dimitriu, C.B., Horsfall, A.B., Wright, N.G., Johnson, C.M., Vassilevski, K.V., O'Neill, A.G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12