Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs

Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

2

開始ページ:

997

終了ページ:

1000

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors H. Amini Moghadam, S. Dimitrijev, J.S. Han, A. Aminbeidokhti, D. Haasmann Trans Tech Publications	7 国際会議録 The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes J.S. Han, P. Tanner, S. Dimitrijev, Q. Shuang, Y. Shen Trans Tech Publications
2 国際会議録 Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes H. Amini Moghadam, S. Dimitrijev, J.S. Han Trans Tech Publications	8 国際会議録 Passivation of the Oxide/4H-SiC Interface Jamet, P., Dimitrijev, S., Tanner, P. Trans Tech Publications
3 国際会議録 Dipole Type Behavior of NO Grown Oxides on 4H-SiC D. Haasmann, H. Amini Moghadam, J.S. Han, A. Aminbeidokhti, A. Iacopi Trans Tech Publications	9 国際会議録 Passivation of the Oxide/4H-SiC Interface Jamet, P., Dimitrijev, S., Tanner, P. Trans Tech Publications
4 国際会議録 The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors H.A. Moghadam, S. Dimitrijev, J.S. Han, D. Haasmann Trans Tech Publications	10 国際会議録 Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures D. Haasmann, S. Dimitrijev, J.S. Han, A. Iacopi Trans Tech Publications
5 国際会議録 A P-Channel MOSFET on 4H-SiC Han, J.S., Cheong, K.Y., Dimitrijev, S., Laube, M., Pensl, G. Trans Tech Publications	11 国際会議録 Development of power accumulation-type SiC MOSFET Linewih,H., Dimitrijev,S., Harrison,H.B. SPIE - The International Society for Optical Engineering
6 国際会議録 Comparison of wet and dry gate oxides for SiC MOSFETs Tanner,P.G., Dimitrijev,S., Harrison,H.B. SPIE - The International Society for Optical Engineering	12 国際会議録 Effect of NO on the Electrical Characteristics of SiO2 Grown on p-Type 4H SiC Li, H. F., Dimitrijev, S., Harrison, H. B., Sweatman, D., Tanner, P. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12