High Temperature Reliability of the SiC-MOSFET with Copper Metallization
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 778-780
- 発行年:
- 2014
- パート:
- 2
- 開始ページ:
- 955
- 終了ページ:
- 958
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
SPIE - The International Society for Optical Engineering |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
国際会議録
Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
Trans Tech Publications |
5
国際会議録
The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests
Trans Tech Publications |
11
国際会議録
DOUBLE-STACKED a-Si/a-Si AND a-SiC/a-Si TANDEM SOLAR CELLS WITH HIGH EFFICIENCY AND HIGH RELIABILITY
Materials Research Society |
Trans Tech Publications |
SPIE - The International Society of Optical Engineering |