V<sub>F</sub> Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers

V_F Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

2

開始ページ:

851

終了ページ:

854

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

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1 国際会議録 Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD) C. Ota, J. Nishio, K. Takao, T. Hatakeyama, T. Shinohe Trans Tech Publications	7 国際会議録 Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD) Hatakeyama, T., Nishio, J., Shinohe, T. Trans Tech Publications
2 国際会議録 Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties Ota, C., Nishio, J., Hatakeyama, T., Shinohe, T., Kojima, K., Nishizawa, S., Ohashi, H. Trans Tech Publications	8 国際会議録 Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation T. Suzuki, J. Senzaki, T. Hatakeyama, K. Fukuda, T. Shinohe Trans Tech Publications
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6 国際会議録 SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC Adachi, K., Omura, I., Ono, R., Nishio, J., Shinohe, T., Ohashi, H., Arai, K. Trans Tech Publications	12 国際会議録 Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H₂-SiH₄-C₃H₈ CVD System K. Tamura, C. Kudou, K. Masumoto, J. Nishio, K. Kojima Trans Tech Publications

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VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers

類似資料:

V_F Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers