Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching

Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

2

開始ページ:

780

終了ページ:

783

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 High-Temperature Operation of Electrostatically-Excited Single-Crystalline 4H-SiC Microcantilever Resonators K. Sato, K. Adachi, H. Okamoto, H. Yamaguchi, T. Kimoto Trans Tech Publications	7 国際会議録 Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes Negoro, Y., Kimoto, T., Matsunami, H., Pensl, G. Trans Tech Publications
2 国際会議録 Fabrication of 4H-SiC Double-Epitaxial MOSFETs Harada, S., Okamoto, M., Yatsuo, T., Adachi, K., Suzuki, K., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications	8 国際会議録 Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching T. Okamoto, Y. Sano, K. Tachibana, K. Arima, A.N. Hattori Trans Tech Publications
3 国際会議録 Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals K. Danno, S. Yamaguchi, H. Kimoto, K. Sato, T. Bessho Trans Tech Publications	9 国際会議録 Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates Chen, Y., Kimoto, T., Takeuchi, Y., Matsunami, H. Trans Tech Publications
4 国際会議録 Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVD Wada, K., Kimoto, T., Nishikawa, K., Matsunami, H. Trans Tech Publications	10 国際会議録 Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates Chen, Y., Kimoto, T., Takeuchi, Y., Matsunami, H. Trans Tech Publications
5 国際会議録 Fabrication of 3-D Structure on P-Type Silicon Using Electrochemical Etching Izuo, S., Saitoh, F., Obji, H., Fukami, T., French, P.J., Tsutsumi, K. Electrochemical Society	11 国際会議録 Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
6 国際会議録 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles Saitoh, H., Kimoto, T. Trans Tech Publications	12 国際会議録 High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12