Characterization of SiO2/SiC Interfaces Annealed in N2O or POCl3

Characterization of SiO₂/SiC Interfaces Annealed in N₂O or POCl₃

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

623

終了ページ:

626

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N₂O and POCl₃ P. Fiorenza, M. Vivona, L.K. Swanson, F. Giannazzo, C. Bongiorno Trans Tech Publications	7 国際会議録 Properties of SiO₂/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process M. Vivona, P. Fiorenza, F. Iucolano, A. Severino, S. Lorenti, F. Roccaforte Trans Tech Publications
2 国際会議録 Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO₂/4H-SiC Interfaces L.K. Swanson, P. Fiorenza, F. Giannazzo, F. Roccaforte Trans Tech Publications	8 国際会議録 Reliability of Thin Thermally Grown SiO₂ on 3C-SiC Studied by Scanning Probe Microscopy J. Eriksson, M.H. Weng, F. Roccaforte, F. Giannazzo, P. Fiorenza Trans Tech Publications
3 国際会議録 Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO₂/4H-SiC Interfaces L.K. Swanson, P. Fiorenza, F. Giannazzo, S. Alessandrino, S. Lorenti Trans Tech Publications	9 国際会議録 A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs P. Fiorenza, A. Frazzetto, L.K. Swanson, F. Giannazzo, F. Roccaforte Trans Tech Publications
4 国際会議録 Anomalous Fowler-Nordheim Tunneling through SiO₂/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements P. Fiorenza, A. La Magna, M. Vivona, F. Giannazzo, F. Roccaforte Trans Tech Publications	10 国際会議録 Nanoscale Characterization of SiC Interfaces and Devices F. Giannazzo, P. Fiorenza, M. Saggio, F. Roccaforte Trans Tech Publications
5 国際会議録 Impact of Phosphorus Implantation on the Electrical Properties of SiO₂/4H-SiC Interfaces Annealed in N₂O P. Fiorenza, S. Di Franco, F. Giannazzo, S. Rascunà, M. Saggio Trans Tech Publications	11 国際会議録 Atomic Layer Deposition of Al₂O₃ Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC E. Schilirò, S. Di Franco, P. Fiorenza, C. Bongiorno, H. Gargouri Trans Tech Publications
6 国際会議録 Conduction Mechanisms at SiO₂/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N₂O P. Fiorenza, F. Giannazzo, A. Frazzetto, A. Guarnera, M. Saggio Trans Tech Publications	12 国際会議録 X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions M. Vivona, P. Fiorenza, S. Di Franco, C. Marcandella, M. Gaillardin Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12