Thin PSG Process for 4H-SiC MOSFET
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 778-780
- 発行年:
- 2014
- パート:
- 1
- 開始ページ:
- 513
- 終了ページ:
- 516
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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4
国際会議録
Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
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Combined N2O and Phosphorus Passivations for the 4H-SiC/SiO2 Interface with Oxide Grown at 1400°C
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The Response of High-Voltage 4H-SiC p-n Junction Diodes to Different Edge-Termination Techniques
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