Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor

著者名:

掲載資料名:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

シリーズ名:

Materials science forum

シリーズ巻号:

778-780

発行年:

2014

パート:

1

開始ページ:

113

終了ページ:

116

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054253
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
回次:	15th
会議開催地:	Miyazaki, Japan
会議開催年:	2013.09.29-2013.10.04
論文注記:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

類似資料:

1 国際会議録 SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor A.A. Burk, D. Tsvetkov, D. Barnhardt, M.J. O'Loughlin, L. Garrett Trans Tech Publications	7 国際会議録 SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices A.A. Burk, M.J. O'Loughlin, J.J. Sumakeris, C. Hallin, E. Berkman Trans Tech Publications
2 国際会議録 Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices M. O'Loughlin, A. Burk Jr., D. Tsvetkov, S. Ustin, J.W. Palmour Trans Tech Publications	8 国際会議録 Multi-wafer VPE growth of highly uniform SiC epitaxial layers O'Loughlin, M. J., Nordby, H. D. Jr., Burk, A. A. Jr. MRS-Materials Research Society
3 国際会議録 Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor Burk, A. A., O'Loughlin, M. J., Paisley, M. J., Powell, A. R., Brady, M. F., Leonard, R. T., Muller, S. G., Allen, S. T. Trans Tech Publications	9 国際会議録 High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs L. Cheng, S.H. Ryu, A.K. Agarwal, M.J. O'Loughlin, A.A. Burk Trans Tech Publications
4 国際会議録 SiC Warm-Wall Planetary VP E Growth on Multiple 100-mm Diameter Wafers Burk, A.A., O'Loughlin, M.J., Paisley, M.J., Powell, A.R., Brady, M.F, Leonard, R.T., McClure, D.A. Trans Tech Publications	10 国際会議録 10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor L. Dong, G.S. Sun, J. Yu, G.G. Yan, W.S. Zhao Trans Tech Publications
5 国際会議録 SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor ,A.A.Burk,Jr., O'Loughlin,M.J., Mani,S.S. Trans Tech Publications	11 国際会議録 Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor B. Thomas, D.M. Hansen, J. Zhang, M.J. Loboda, J. Uchiyama Trans Tech Publications
6 国際会議録 150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor Y.Q. Sun, G. Feng, L.P. Lv, W.N. Qian, Y.Y. Li Trans Tech Publications	12 国際会議録 50 µm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor Y.Q. Sun, G. Feng, Z.Y. Li, L.P. Lv, J.Y. Luo Trans Tech Publications

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