Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region

Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region

著者名:

掲載資料名:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

シリーズ名:

Materials science forum

シリーズ巻号:

740-742

発行年:

2013

開始ページ:

565

終了ページ:

568

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054223
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
回次:	9th
会議開催地:	St. Petersburg, Russian Federation
会議開催年:	2012.09.02-2012.09.06
論文注記:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

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