A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements

A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements

著者名:

掲載資料名:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

シリーズ名:

Materials science forum

シリーズ巻号:

740-742

発行年:

2013

開始ページ:

465

終了ページ:

468

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054223
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
回次:	9th
会議開催地:	St. Petersburg, Russian Federation
会議開催年:	2012.09.02-2012.09.06
論文注記:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

類似資料:

1 国際会議録 Effect of Nuclear Scattering Damage at SiO₂/SiC and Al₂O₃/SiC Interfaces - a Radiation Hardness Study of Dielectrics M. Usman, A. Hallén, K. Gulbinas, V. Grivickas Trans Tech Publications	7 国際会議録 Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum Grivickas, P., Grivickas, V., Galeckas, A., Linnros, J. Trans Tech Publications
2 国際会議録 Interface Analysis of P-Type 4H-SiC/Al₂O₃ Using Synchrotron-Based XPS S.S. Suvanam, M.G. Yazdi, M. Usman, M. Götelid, A. Hallén Trans Tech Publications	8 国際会議録 Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum Grivickas, P., Grivickas, V., Galeckas, A., Linnros, J. Trans Tech Publications
3 国際会議録 Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation S.S. Suvanam, D.M. Martin, C.M. Zetterling, A. Hallén Trans Tech Publications	9 国際会議録 Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers:A Study of Carrier Recombination and Transport Parameters Grivickas,V., Linnros,J., Galeckas,A. Trans Tech Publications
4 国際会議録 Alkali Metal Re-Distribution after Oxidation of 4H-SiC M.K. Linnarsson, S.S. Suvanam, L. Vines, A. Hallén Trans Tech Publications	10 国際会議録 Total Dose Effects on 4H-SiC Bipolar Junction Transistors S.S. Suvanam, L. Lanni, B.G. Malm, C.M. Zetterling, A. Hallén Trans Tech Publications
5 国際会議録 Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions V. Grivickas, K. Gulbinas, P. Grivickas, G. Manolis, J. Linnros Trans Tech Publications	11 国際会議録 Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection Grivickas, V., Galeckas, A., Grivickas, P., Linnros, J. Trans Tech Publications
6 国際会議録 Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence Grivickas, P., Linnros, J., Grivickas, V. Trans Tech Publications	12 国際会議録 Probing of Carrier Recombination in n- and p-Type 6H-SiC Using Ultrafast Supercontinuum Pulses P. Grivickas, S. Sampayan, K. Redeckas, M. Vengris, V. Grivickas Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12