High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon

High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon

著者名:

掲載資料名:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

シリーズ名:

Materials science forum

シリーズ巻号:

740-742

発行年:

2013

開始ページ:

327

終了ページ:

330

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054223
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
回次:	9th
会議開催地:	St. Petersburg, Russian Federation
会議開催年:	2012.09.02-2012.09.06
論文注記:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

類似資料:

1 国際会議録 Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy S. Sambonsuge, E. Saito, M.H. Jung, H. Fukidome, S. Filimonov Trans Tech Publications	7 国際会議録 Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer Nakazawa, H., Suemitsu, M. Trans Tech Publications
2 国際会議録 Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates H. Handa, S. Ito, H. Fukidome, M. Suemitsu Trans Tech Publications	8 国際会議録 Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer Nakazawa, H., Suemitsu, M. Trans Tech Publications
3 国際会議録 Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane E. Saito, S. Filimonov, M. Suemitsu Trans Tech Publications	9 国際会議録 Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates Saddow, S. E., Carter, G., Geil, B., Zheleva, T., Melnychuck, G., Okhuysen, M. E., Mazzola, M. S., Vispute, R. D., … Trans Tech Publications
4 国際会議録 Low-Temperature Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane A. Konno, Y. Narita, T. Itoh, K. Yasui, H. Nakzawa, T. Endoh, M. Suemitsu Electrochemical Society	10 国際会議録 Formation of High Quality SiC on Si(100) at 9000C using Monomethylsilane Gas-Source MBE Nakazawa, H., Suemitsu, M., Asami, S. Trans Tech Publications
5 国際会議録 High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure S. Jiao, Y. Murakami, H. Nagasawa, H. Fukidome, I. Makabe Trans Tech Publications	11 国際会議録 Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski Trans Tech Publications
6 国際会議録 High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si₂Cl₆+C₃H₈ H.T. Lee, H.J. Lee, M.S. Park, Y.S. Jang, W.J. Lee Trans Tech Publications	12 国際会議録 Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers A. Ouerghi, M. Portail, A. Kahouli, L. Travers, T. Chassagne Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12