Color Chart for Thin SiC Films Grown on Si Substrates

Color Chart for Thin SiC Films Grown on Si Substrates

著者名:

掲載資料名:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

シリーズ名:

Materials science forum

シリーズ巻号:

740-742

発行年:

2013

開始ページ:

279

終了ページ:

282

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054223
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
回次:	9th
会議開催地:	St. Petersburg, Russian Federation
会議開催年:	2012.09.02-2012.09.06
論文注記:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

類似資料:

1 国際会議録 Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ* Oxidation* L. Wang, S. Dimitrijev, A. Iacopi, L. Hold, G. Walker Trans Tech Publications	7 国際会議録 Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes H. Amini Moghadam, S. Dimitrijev, J.S. Han Trans Tech Publications
2 国際会議録 Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures D. Haasmann, S. Dimitrijev, J.S. Han, A. Iacopi Trans Tech Publications	8 国際会議録 MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270℃ Li Wang, Sima Dimitrijev, Leonie Hold, Frederick Kong, Philip Tanner, Jisheng Han, Gunter Wagner Materials Research Society
3 国際会議録 InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate J.S. Han, S. Dimitrjiev, L. Wang, A. Iacopi, S. Qu Trans Tech Publications	9 国際会議録 Fabrication of SiC_f/SiC Composite with In Situ* Grown SiC Nanowire by Polymer and Infiltration Pyrolysis Process* S.J. Zeng, J.S. Yu, X.G. Zhou, H.L. Wang Trans Tech Publications
4 国際会議録 Dipole Type Behavior of NO Grown Oxides on 4H-SiC D. Haasmann, H. Amini Moghadam, J.S. Han, A. Aminbeidokhti, A. Iacopi Trans Tech Publications	10 国際会議録 In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD Sun, G.S., Luo, M.C., Wang, L., Zhu, S.R., Li, J.M., Zeng, Y.P., Lin, L.Y. Trans Tech Publications
5 国際会議録 A P-Channel MOSFET on 4H-SiC Han, J.S., Cheong, K.Y., Dimitrijev, S., Laube, M., Pensl, G. Trans Tech Publications	11 国際会議録 In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD Sun, G.S., Luo, M.C., Wang, L., Zhu, S.R., Li, J.M., Zeng, Y.P., Lin, L.Y. Trans Tech Publications
6 国際会議録 Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at Al_xGa_1-xN/4H-SiC Interface Z.W. Shen, F. Zhang, S. Dimitrijev, J.S. Han, L.X. Tian, G.G. Yan, Z.X. Wen, W.S. Zhao, L. Wang, X.F. Liu, G.S. Sun, … Trans Tech Publications	12 国際会議録 The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes J.S. Han, P. Tanner, S. Dimitrijev, Q. Shuang, Y. Shen Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12