Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiC under Electron Beam Irradiation
- 著者名:
- 掲載資料名:
- Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 725
- 発行年:
- 2012
- 開始ページ:
- 45
- 終了ページ:
- 48
- 総ページ数:
- 4
- 出版情報:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)
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