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Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy

著者名:
掲載資料名:
Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan
シリーズ名:
Materials science forum
シリーズ巻号:
725
発行年:
2012
開始ページ:
11
終了ページ:
14
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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